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Description
- Type Designator: BD132
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 11 W
- Maximum Collector-Base Voltage |Vcb|: 45 V
- Maximum Collector-Emitter Voltage |Vce|: 45 V
- Maximum Emitter-Base Voltage |Veb|: 4 V
- Maximum Collector Current |Ic max|: 3 A
- Max. Operating Junction Temperature (Tj): 125 °C
- Transition Frequency (ft): 60 MHz
- Forward Current Transfer Ratio (hFE), MIN: 40
- Package: TO126
