BD139 Transistor bipolaire – NPN –
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BD139 Transistor bipolaire – NPN –

    60.00 د.ج

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    Description

    • Type Designator: BD139
    • Material of Transistor: Si
    • Polarity: NPN
    • Maximum Collector Power Dissipation (Pc): 12 W
    • Maximum Collector-Base Voltage |Vcb|: 80 V
    • Maximum Collector-Emitter Voltage |Vce|: 80 V
    • Maximum Emitter-Base Voltage |Veb|: 5 V
    • Maximum Collector Current |Ic max|: 1 A
    • Max. Operating Junction Temperature (Tj): 150 °C
    • Transition Frequency (ft): 50 MHz
    • Forward Current Transfer Ratio (hFE), MIN: 40
    • Package: TO126

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    BD139 Transistor bipolaire – NPN –

    BD139 Transistor bipolaire – NPN –

    60.00 د.ج

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