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Description
- Type Designator: 2SK3568
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 40 W
- Maximum Drain-Source Voltage |Vds|: 500 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 12 A
- Maximum Junction Temperature (Tj): 150 °C
- Total Gate Charge (Qg): 42 nC
- Rise Time (tr): 22 nS
- Drain-Source Capacitance (Cd): 180 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.52 Ohm
