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Description
Type Designator: FGH60N60UFD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 298
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Courant collecteur CC maximum (Ic) : 60,0A
Maximum Collector Current |Ic| @25℃, A: 120
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 58
Collector Capacity (Cc), typ, pF: 325
Total Gate Charge (Qg), typ, nC: 188
Package: TO247
