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Description
Marking Code: 110N8F6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 80 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 110 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 150 nC
Rise Time (tr): 61 nS
Drain-Source Capacitance (Cd): 320 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm
Package: TO-220
