BD139 Transistor bipolaire – NPN –

60.00 د.ج

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60.00 د.ج

Description

  • Type Designator: BD139
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation (Pc): 12 W
  • Maximum Collector-Base Voltage |Vcb|: 80 V
  • Maximum Collector-Emitter Voltage |Vce|: 80 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 1 A
  • Max. Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 50 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 40
  • Package: TO126

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BD139 Transistor bipolaire – NPN –

60.00 د.ج

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