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Description
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 0.3 W
- Maximum Collector-Base Voltage |Vcb|: 40 V
- Maximum Collector-Emitter Voltage |Vce|: 25 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 0.5 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 150 MHz
- Forward Current Transfer Ratio (hFE), MIN: 120
