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Description
- Type Designator: IRFD120
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Pdⓘ – Maximum Power Dissipation: 1.3 W
- |Vds|ⓘ – Maximum Drain-Source Voltage: 100 V
- |Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
- |Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
- |Id|ⓘ – Maximum Drain Current: 1.3 A
- Tjⓘ – Maximum Junction Temperature: 175 °C
- Qgⓘ – Total Gate Charge: 16(max) nC
- trⓘ – Rise Time: 27 nS
- Cossⓘ – Output Capacitance: 150 pF
- Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.27 Ohm
- Package: HD-1
